1550nm Semiconductor Laser Radar Imaging Detector Development

As the core device of the laser radar imaging MSM photo detectorstake on several advantages. Its production progress is relatively simple; thevalue of the Intrinsic Capacitance is small; its response time can reachpicosecond, and the noise of it is low; it is easy to make flat panel detector.This paper starts from the photoelectric characteristics of MSM PD.According to the band theory, analyzed the structural, optical and electronicproperties of this device. The main work has several parts as shown:1. To explain the principle of the device based on band theory.2. To grow epitaxial layers on InP based by MOCVD.3. The device could perform at1550nm.To finish the process of the deviceunder a series of semiconductor process, such as photoetching, etching,metal evaporation, etc.4. To do I V, frequency measurement, photoelectric mixing and imagingexperiment test.