| Based on the requirements of a shipboard radar project,this article carries out the research, design and testing of a C-band RF power amplifier. The theoretical basis of RF power amplifier, the related technology and design method are studied.According to the design specifications of the project requirements, it finally adopts two amplification circuit structure by its analysis and research, Including the driver stage and the power amplifier stage. In the selection of the amplifier stage GaN HEMT, amplifier stage is designed and simulated using the ADS software by small signal S parameter method, we eventually get better simulation results by S-parameter optimization design. The driver stage choses C-band within the matching power amplifier module,and design its bias circuit. It designes power supply control circuit by the characteristics of sequencing bias. Finally, debugging and testing of the performance indicators of the power amplifier.Through the test of Power Amplifier to verify the design quality.The Results show that within4-6.5GHz frequency band, saturated output power is greater than38.5dBm, gain is greater than38dB, gain flatness is less than2dB, input and output standing wave ratio is less than2:1,and efficiency is about25%.finally the test results meets the design requirements of the project. The amplifier has the advantages of wide-band, high gain flatness, low VSWR and low power consumption. |
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