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Research On Low Noise Amplifier For Wireless Receiver Front-Ends

Posted on:2015-02-15Degree:MasterType:Thesis
Country:ChinaCandidate:M C CenFull Text:PDF
GTID:2268330431957661Subject:Circuits and Systems
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Nowadays, with the rapid development of wireless communication technology, demand for wireless communication system featuring high data rates and mobility is increasingly widening. As the key component of the radio-frequency (RF) receiver front-end, low noise amplifier (LNA) has all along been the focus of the microelectronics industry research, whilst miniaturization, low power consumption, low cost and integration are now an inevitable trend for the development of RF wireless terminals. Therefore, an in-depth research of RF CMOS integrated circuits is of great significance to meet the new standards of wireless communication requirements which features are higher speed and lower power consumption.The purpose of this paper is to give an in-depth study and design the low noise amplifier used on wireless receiver front-ends. Firstly, a detailed explanation of the basic design theory of the low noise amplifier is given, with S parameters, theory of noise, the linearity of the amplifier and RF CMOS device features all included. Then further analysis and research of LNA design techniques with an attempt to explore and command how low noise amplifier is designed. Thirdly, a narrow band LNA with a center frequency of5.7GHz for802.11a wireless local area network (WLAN) receivers is designed and presented based on the above-said LNA theory. Fourthly, according to the research of the broadband low noise amplifier has been made, a new type of input matching structure is put into discussion, so as to relieve the transconductance limitation problem which happens to the ultra-wideband (UWB) low noise amplifier with traditional gate input matching structure, meanwhile a3.1GHz-10.6GHz ultra wideband low noise amplifier is designed and verified, in which layout design and simulation validation will be included.In this paper, the ultra wideband LNA was fabricated in TSMC0.18μm technology. The simulation results show that the LNA has an average noise figure3.5±0.15dB, a power gain16.50dB with a flatness of0.6dB, the input and output return loss are less than-10dB from3to10.6GHz and a IIP3of13.78dBm at5.75GHz. The power consumption is8.672mW at1.8V supply voltage.
Keywords/Search Tags:Low noise amplifier, UWB, layout, common gate
PDF Full Text Request
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