The Application Of Carleman In The Inversion Problem Of Semiconductor Doping Profile

Subject of this work is to study the identifiability of the doping profile from ad-ditional measurements. A global Carleman estimate is established for transient Drift-diffusion system and used for the identification problem. Lipschitz stability of the doping profile on boundary and mid-time measurements is derived. We use a Bayesian approach with Total Variation(TV) priors to solve this inverse problem. Results of nu-merical simulations for an N-P bipolar diode are presented.