Preparation And Characterization Of Strain

As “Moore’s law” rapidly shrinks the feature size of Si microelectronic devices to their ultimate physical limits, and people began to effort to expand silicon-based microelectronics technology. In fact, silicon has been extensively studied as an optical device integration platform. However, silicon is an indirect bandgap material and can not be used as high-efficiency light source, and the fact has hindered its development. People began to focus on other group IV semiconductor material. Although the candidate materials germanium is an indirect bandgap, the difference between its direct band and indirect band is only 0.136 e V, and the introduction of tensile strain can make the difference further reduced. In this paper, the silicon nitride film with high stress is prepared by plasma enhanced chemical vapor deposition. The strain is introduced into the Ge film material by stressed silicon nitride, and Ge film material is prepared as a light emitting diode. The production process of the light emitting diode is explored. Then we successfully demonstrated electroluminescent properties of germanium. This paper provides a basis on the study of the optical properties of germanium.