Study On Some Problems In The Manufacturing Of High Power LED Chip Electrode

LED quickly occupied the instructions, display, lighting and other fields with its energy-saving, environmental protection, long life and other advantages. Research on the GaN-based of Lighting-Emitting-Diodes had been setting off and developed rapidly in recent years, then countries have also introduced policies to support the development of semiconductor lighting industry.Now the performance and technology of the successful development about GaN-based LED has also made an important breakthroughs and progress, but there are still some problems:mainly LED luminous efficiency needs to be further improved, chip manufacturing should continue to reduce the cost of the public acceptable range, how to improve their preparation techniques, development of new materials is a valuable research project. In this paper, GaN-based high power LED was to as the research object, the main contents are:1. To analyze the ways to enhance the luminous efficiency of the LED chip light, and introduce its research progress and outlines;2. To describe details of the vertical structure of the LED’s preparation process, and the electrode manufacturing process of the key technologies;3. To study the effects of different process technology for high reflectivity P-GaN ohmic contact electrode;4. To study the preparation and properties of the vertical structure of the LED chip electrode Ni/Sn alloy back the gold layer, and discuss the impact of an alloy of gold as a backing layer of chip properties.