Fabrication Of ZnO Nano-arrays On Si Substrate And The Modification Of ZnO Nano-arrays

Nanostructed ZnO is a new kind of wide band gap semiconductor mater with high performance. The band gap of zinc oxide(ZnO) is 3.37 eV, and it has a large exciton binding energy of 60 meV. Currently, ZnO nano-material has been used in many fields, and it has been regard as a promising candidate in the filed of short-wavelength emitting and detecting field. Currently, researchers use 1D ZnO nanorods/nanoarray to fabricate optoelectronic devices with excellent performance. The morphology and structure of nano-material are important for the device application. This paper reported the fabrication of ZnO nanorods/nanoarrays on Si, and effect of the growth parameters on feature of morphology and structure has been studied. The modification of ZnO naonrods has been researched by the wet chemical etching using ammonium chloride. Details of the research work are list as bellow.(1) Firstly, ZnO nanorods/nanoarrays with different structure have been fabricated by the hydrothermal method with different concentration on Si substrate. The influence of concentration on the morphology and structure of ZnO nanorods/nanoarrays has been investigated respectively by SEM, XRD and TEM technology. In addition, the effect of seed layer annealing treatment on the subsequently etching on the ZnO nanorod/nanoarray has also been studied.(2) Secondly, based on the test results of SEM, TEM and XRD, a growth model of ZnO nanorods/nanoarrays has been proposed using crystal growth theory.(3) Finally, ZnO nanorods/nanoarrays has been modified with a controlled wet etching method, and the influence of etching time on the morphology and structure of ZnO nanorods/nanoarrays has been studied. ZnO nanorods/nanoarrays with sharp end were obtained. The results provide a technical basis for preparing field emission device. ZnO nanorods still keep vertical state to the substrate within a certain etching time.