Investigations On Synthesis,Doping And Property Of N-Cu2O

Since 70s of the 20th century, a lot of scholars were researched the cuprous oxide cause of direct band structure, high efficiency, cheap and abundant raw materials.Many methods such as magnetron sputtering method, high temperature oxidation and anodic oxidation were only prepared p-type cuprous oxide thin films.But up to now there were no good method to prepare n-type cuprous oxide thin film.At present the heteroj unction cuprous oxide thin film solar cell conversion efficiency are relatively low.The highest photoelectric conversion efficiency of cuprous oxide solar cells only for n-type zinc oxide/p-type cuprous oxide battery efficiency is only 5%.So one of the effective ways to improve the cuprous oxide solar cells conversion efficiency was prepared the n-type cuprous oxide thin films and on this basis to prepared homogeneous junction solar cells.In this work,the n-type Cu2O thin films were prepared by three-electrode electrochemical deposition and doped with many ions.XRD,SEM,UV-Vis have been used to characterize the thin films.The photoelectric property of the n-type Cu2O were through the c-v and i-t test.The main work was listed as follow:1. Using three electrode system electrochemical deposition, ITO transparent conductive glass as the working electrode, in copper sulfate-lactic acid solution, determine when the electrolyte pH 8.5,9,10 we can get n-type cuprous oxide thin film preparation.In addition, deposition temperature and annealing temperature on n-type cuprous oxide film of the influence of crystal structure and photoelectric properties.The research results show that the increase of deposition temperature is advantageous to the cuprous oxide crystal growth, the increase of annealing temperature can improve the photoelectric performance of the cuprous oxide thin films.When the deposition temperature is 60℃, annealing temperature is 400℃,crystal growth is good, and the photoelectric performance is the best.2. On the basis of the above work, doping Al3+, Zn2+ and Cd2+ and No3-, Co2+, Cl- to the cuprous oxide thin films for improve its photoelectric performance using the method of i-t and c-v to analysis doping ion conductive type of cuprous oxide film, optical current density, the influence of carrier concentration and to explore its causes the experimental.The research results show that the ion doping conductive type does not change the cuprous oxide film, but it will improve the cuprous oxide film carrier concentration and current density. When doping 130mM Zn2+ to the cuprous oxide thin film performance:best photocurrent density of 0.1 mA/cm2, carrier concentration is 9.74×1019 cm, nearly 11 times higher than that of without doping respectively and 9 times.3. This paper studies the doping different concentrations Zn2+ on the organization structure and photoelectric properties cuprous oxide film.Inductance coupling analysis results show that the influence of Zn2+ has been successfully doped to cuprous oxide thin films.And the incorporation of Zn2+ cuprous oxide thin film forbidden band width will be reduced from 2.2eV to 1.8eV and Zn2+ doping will significantly improve the cuprous oxide film of photocurrent density and carrier concentration, when Zn2+doping amount is 160 mm, maximum,4×1019cm-3 and respectively 0.13mA/cm2.