Preparation Of Tin And Zinc Element Doped Barium Titanate Ceramics And Research Of The Dielectric Property

Ba Ti O3 is an important dielectric material for manufacturing multilayer ceramics capacitors. Pure Ba Ti O3 ceramics have a high sintering temperature, low dielectric constant, large dielectric loss and a strong dielectric peak exist around the phase transition temperature. Such disadvantage refrain the application of Ba Ti O3 ceramics and imply that the necessary such as modifying the temperature stability, regulating the grain size distribution and decreasing the dielectric loss by doping proper metal oxides, for satisfying with the standard specified by Electronic Industries Alliance.In this paper, we have prepared four series of single doped and co-doped Ba Ti O3 ceramics with Zn O, Sn O2 and Zn2 Sn O4 via traditional solid reaction method. These samples were sintering at four different temperatures and three holding times. We have investigated the dielectric properties of these ceramics in terms of sintering properties, temperature and frequency dependence of dielectric constant and loss, lattice parameters and microstructure. The obtained results were discussed under microscopic evolution, crystal lattice parameter variations and impedance spectroscopic analysis.These results indicate that Zn O could promote the sintering behavior of Ba Ti O3 ceramics, reduce the sintering temperature, decrease the pores and obtain a finegrained structure Ba Ti O3 ceramics; Sn O2 doped Ba Ti O3 ceramics is hardly sintering but strongly press the dielectric peaks; Zn2 Sn O4 doped Ba Ti O3 ceramics have compact density, raise up the dielectric constants at room temperature, decrease the dielectric loss and improve the temperature stability. Ba Ti O3 ceramics with 2% Zn2 Sn O4 doping contents satisfied with Y5 V temperature characteristic specification and near the X7 R specification. Zn2 Sn O4 doped Ba Ti O3 ceramics present two relaxation behaviors in a wide range frequency scope, i.e. a Debye type relaxation originated from dipoles polarization in high frequency region and ionization of oxygen vacancy induced relaxation process in low frequency region, these two relaxation mechanisms modify the loss variation of Ba Ti O3 ceramics in a wide temperature region.