The Research Of Epitaxial Growth In MPCVD Single Crystal Diamond

Due to the special crystal structure, diamond is the hardest substance founded in nature, it also has the highest thermal conductivity at room temperature, low thermal expansion coefficient, excellent chemical stability, semiconductor properties and excellent optical properties(high refractive index,high dispersion and high optical transmittance from the far infrared to the ultraviolet and) and other excellent nature,so the diamond has a very wide industrial application prospect. However,for the reason that the scarcity of the diamond resources,quality differences, crystal morphology and size are difficult to meet industrial requirements and the high prices, severely hinder the development and utilization of diamond materials.Microwave Plasma Chemical Vapor Deposition is a method of prepare synthetic diamond rely on the MPCVD apparatus and under certain conditions of temperature and pressure. This method has advantages of low production costs, high deposition speed and high product quality,recognized as the best method in synthetic diamond field.This article,through repeated experiments, aims to discover and research the influence factors of the MPCVD single crystal diamond,such as methane,hydrogen,nitrogen,oxygen,seed’s type,seed’s face,the placing method of seed, chamber pressure and the temperature of substrate. In order to summrize the characteristics of MPCVD single diamond,experimental samples were detected and analyzed by conventional gemological instruments with Raman spectroscopy and Fourier transform infrared Spectrum(FTIR).At last,summarize and prospect the possible applications in gemology and industrial filed in the future.