Preparation, Characterization And Electrical Properties Study Omof SnS₂ Two Dimensional Materials

Since Graphene discovered, the two dimensional materials have attracted a lot of attention with unique properties. At present, the study of two-dimensional materials has beyond the Graphene material itself, and gradually extended to other Grapheme-like layered structures material. Because of it has layered structure, the layered metal dichalcogenides (LMDs) have been paid more and more attention by researchers. Tin disulfide (SnS2) is one of them. Between its layers, there is no formed chemical bonds, only combined by weakly van der Waals force. This makes it can be exfoliated into two dimensional material.Here, we presented few thin layer samples of SnS2 which were exfoliated from bulk material by mechanical method. Used atomic force microscopy (AFM), we determined a thinnest sample’s thickness is 3 nm and 4 layers around. In the process of Raman Spectra Characterization of different layer thickness samples, the characteristic peaks of SnS2 were observed with the special phenomena of the movement and splitting. We determined the type of our sample through the relationship between different characteristic peaks and the poly-type of SnS2.Using the micro-device processing technology, we produced a field effect transistor (FET) by using the 4 layers SnS2 sample as the channel material and characterized the function of this transistor. The results of electrical properties show that the type of our sample is a n-type semiconductor. In room temperature, the device’s threshold voltage is below 25 V, Ion/Ioff ratio is more than 4×104, the carrier mobility is more than 0.1 cm2V-1s-1 in back gate FET structure.