The Study Of Copper Alloy Buffer Layer’s Characteristics And Its Application In Display

The copper alloy material has the advantages of low cost and easy etching. It is in the research and development by a growing number of research institutions. This thesis focuses on the properties of copper alloy material and its application in the display device. The copper alloy material will provide lower cost solution and enhance the competitiveness of products used for enterprises.This thesis uses the magnetron sputtering device to deposit copper alloy thin films and makes a systematic study on the characteristics of the copper alloy thin films, copper alloy/copper laminated films, and copper alloy/copper laminated film’s etching. In addition, we use copper alloy materials to display devices. The main research work of this thesis is as follows:1. The deposition rate and etching rate of CuMn alloy thin films were studied. The deposition rate of CuMn alloy thin film is positively related to the deposition power, and its deposition rate is more than 70% than that of the molybdenum alloy; the etching rate of the CuMn/Cu lamination film is 44% higher than that of the molybdenum alloy.2. The resistance, adhesion and diffusion resistance of CuMn thin films were studied. CuMn thin film resistance was significantly lower than that of molybdenum alloy, about 1/5 of the molybdenum alloy films; in the annealing temperature range 250-350 deg.c; The resistance of CuMn film is positively related to annealing temperature and time, the higher annealing temperature and the longer time, the resistance is lower; In the glass, the adhesion of CuMn/Cu lamination film is more than 4B, as well as Molybdenum alloy/Cu laminated film. The CuMn thin films can effectively prevent the diffusion of copper to the active layer, as well as molybdenum alloy.3. The etching properties of CuMn/Cu thin films were studied. In over etching amount 30% to 100% range, etching morphology of CuMn/Cu laminated film is normal,no etching residue, no tip, no undercut; CD bias is less than 2.0um; tape angle is less than 60 degrees. Etching characteristics of CuMn/Cu laminated films meet the needs of flat panel display devices.4. We have used copper alloy/Cu for display in the gate and S/D electrode, and completed the a-Si thin film transistor device. We use high precision TFT characteristic test instruments Agilent 4070 to get the device performance. Experimental results show that the device on state current is 8.11uA, off state current is 6.95pA, switch ratio is 1.17 x 106, migration rate is 0.71 cm2/V.s, its characteristics is in accordance with the requirements of the display device, as well as molybdenum alloys. Copper alloy material can be applied to a display device.