Silicon Nitride And Phosphorus And Boron Doped Germanium Nanoparti-cles Synthesized By Nonthermal Plasma

Nonthermal plasma becomes a more and more important technique to synthesize nanoparticles because of its ability in controling the size, size distribution, crystalline and chemical components. For the wide application prospect of silicon nitride nanoparticles and Ge nanoparticles, silicon nitride nanoparticles, P doped Ge nanoparticles, B doped Ge nanoparticles were synthesized by nonthermal plasma in the paper.Silicon nitride nanoparticles, its size is 12 nm and the standard deviation of its size distribution is 2.3 nm, were prepared by nonthemal plasma. The silicon nitride nanoparticles in which the atom ratio of Si and N is 0.7384 is produced by regulating the flow of silane and ammonia. When the silicon nitride nanoparticles in which the atom ratio of Si and N is 0.7384 were used to prepare film, the good quality silicon nitride film was got because of the excellent water-solubility of silicon nitride nanoparticles.P doped Ge nanoparticles, its size is 8.2 nm and the standard deviation of its size distribution is 1.2 nm, were prepared by nonthemal plasma. B doped Ge nanoparticles, its size is 7.7 nm and the standard deviation of its size distribution is 1.7 nm, were also prepared by plasma. It was found that P and B tend to be distributed in the surface of Ge nanoparticles and the doping element inhibites the oxidation of Ge nanoparticles.