The Study About Properties Of Aluminum-Duped Zinc Oxide Transparent Conductive Film Prepared By Magnetron Sputtering

In recent years, the transparent conductive film have caused widespread concern in many aspects of the touch panel, liquid crystal displays, solar cells. The AZO film work as the major transparent conductive film material because of low resistivity and high transmittance. Relative to other materials of transparent conductive thin film, AZO film have advantages of raw materials abundant, low price, non-toxic and so on. Nowadays, various technologies have been reported to produce AZO thin films, and magnetron sputtering with high deposition rate and uniformity is considered to be one of the most important methods for preparing AZO thin films.In the papers, AZO thin films were prepared by magnetron sputtering, which explore the effect of sputtering power, sputtering pressure, substrate temperature and H doping concentration act on structure, optical and electronic properties of AZO. The conclusions are as follows.1. The process parameters such as sputtering power, sputtering pressure, substrate temperature have a major impact to AZO film properties. With the increased of the sputtering power, the crystallization properties of the AZO thin films gradually increases, the transmittance of the film was gradually reduced from 85% to 65%, the film resistance first decreases and then increases, When the sputtering power was 250W, the resistivity of the thin film was 5.8×10-3Ω·cm which reaches the lowest. With the increased of the sputtering pressure, the crystallization of the AZO thin films did not change any more, the transmittance of the film decreased slightly to 70%, the resistance of the film firstly reduced and then increased with a slight tendency, When the sputtering pressure was 1.0Pa, the film grain size was the biggest and the lowest resistivity was 8.6×10-3Ω·cm. With the increased of the substrate temperature, the crystallization properties of film gradually decreased, the transmittance of film firstly increased and then reduced to 75%, the resistance of the film decreased first and then increased, When the substrate temperature was 100℃, the lowest resistivity was 6.32×10-3Ω·cm.2. H doping concentration has a major impact on the structural, electrical and optical properties of AZO:H thin films. With the increased of H doping concentration, the intensity of (002) diffraction peaks were gradually reduced, the (100) and (101) diffraction peak changed with a strengthening trend, the crystallization properties of film was decreased, but the transmittance of film increased to 85%, the lowest resistivity of film was 2.39×10-3Ω·cm which also changed with a significant decreasing trend. Therefore, the amount of H doped AZO film has greatly improved the structure and optoelectronic properties of AZO film. As H doping concentration R was 0.01, with the increased of substrate temperature, the crystalline properties of films have been greatly improved, and the grain size increased, the transmittance of film firstly increased and then reduced to 75%, the resistivity of the film changed with a downward trend, and the lowest resistivity was 7.58×10-3Ω·cm. After contrasting the Fourier transform infrared spectroscopy between AZO and AZO:H film, the O-H bond region of vibration mode (LVM) absorption band was observed from AZO:H film. It found that H doped has a great influence to the SEM of AZO:H films which selected from the films of different H doped concentration, as to H play a part in etching and inactivating in deposition process, when H doping concentration of R was 0.04, the surface morphology of film was same as Polygon shape and flaky shape.