Font Size: a A A

Defects Regulation Of ZnO Nanorods With Rich O And Stability Of Proton Irradiation

Posted on:2017-03-30Degree:MasterType:Thesis
Country:ChinaCandidate:D G PengFull Text:PDF
GTID:2271330509957297Subject:Materials engineering
Abstract/Summary:PDF Full Text Request
Zinc oxide is widely used due to its multi-purpose nature of the exhibit, the nature of the addition depends on its composition and structural changes within the organization, its internal understanding of intrinsic defects is particularly important. Under normal circumstances obtained are n-type zinc oxide due to the presence of self-compensating effect of the crystal, p-type zinc oxide it difficult to prepare, many researchers are using the doping method to obtain p-type zinc oxide, but its quality is still not satisfactory, it is mostly not understand the internal mechanisms of its intrinsic defects caused. That is the purpose of this article would like to obtain a preparation of pure zinc oxide nanorods test methods by exploring, and in an oxygen-rich environment, its defects regulation, Zinc oxide intrinsic defect changes, but also on the change of proton irradiation stability of the inquiry, the following key elements:Firstly, that is, the use of comparative experiments, the main factors affecting the test heating rate and the heating temperature are discussed by comparing observed SEM morphology, and ultimately determine the method of Preparation of zinc oxide nanorods chemical vapor deposition decomposition, muffle furnace at 10 V voltage, zinc acetate was heated to 300 ℃, insulation 150 min, furnace cooling to room temperature, a sample was taken, and its aspect ratio and meet the test requirements morphology and high purity.Next, zinc oxide nanorods internal defects regulation, the method of two kinds of enriched oxygen atmosphere annealing process at different temperatures and hydrogen peroxide treatment, zinc oxide nanorods by the n-type to p-type zinc oxide conversion of zinc oxide, and design a complete analysis and testing program, characterize its internal structure and change of intrinsic defects, in order to explore the changing nature of the process of transition. Oxygen enrichment process can prove that the zinc oxide nanorods reduce internal oxygen vacancy defects, and the emergence of zinc vacancy by the donor to the acceptor defect status defect status changes.Finally, to test the stability of the zinc oxide-enriched post-irradiation treatment, also designed proton irradiation experiment, and carefully selecting different grain size of zinc oxide, and zinc oxide doped with Li elements as compared to explore different methods difference p-type zinc oxide obtained between. Proved that zinc oxide nanorods optical performance obtained in this experiment in general, but the anti-radiation ability, optical properties before and after irradiation does not substantially decrease. The 90 nm zinc oxide grains smaller commercially available, optical performance is stronger than zinc oxide nanorods, weaker than the zinc oxide 800 ℃ oxygen atmosphere annealing and doping elements Li, 150 ℃ anti-radiation performance of 90 nm zinc oxide limited role; and demonstrate the oxygen vacancy defects after irradiation amount increases.
Keywords/Search Tags:ZnO nanorods, oxygen enrichment process, oxygen anneal, proton irradiation, p-type semiconductor
PDF Full Text Request
Related items