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Preparation And Propertiesof Sulfur-deficient Sulfide Photocatalysts Active In Visible Light

Posted on:2017-05-01Degree:MasterType:Thesis
Country:ChinaCandidate:L G HuaFull Text:PDF
GTID:2271330509959663Subject:Applied Chemistry
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Recently, semiconductor materials has attraced tremendous attention because oftheir potential applications in the field of energy conversion and pollution treatment.Metal sulfide has become one of the most important semiconductor materials owning to its excellent visible-light response, appropriate bandgap structure, Earth-abundant raw materials, low-cost operation, etc.Nevertheless, metal sulfides, such as Cd S,Zn In2S4 and Cd In2S4 still suffer obstacleslikethe rapid combination of photoinduced electron-hole pair, small specific surface area and tendentious corrosion in photo-electric reaction, etc. Therefore, it is desirable to find out an effective route improve the activity and stability of this kind of semiconductors.Herein, firstly, Cd S was treated by a two-step method, Na BH4 solid-phase reduction and surface modification by HF, resulting in the doping of sulfur defects and fluorine ions. Similarly, sulfur-deficient Zn In2S4-xand Cd In2S4-xwere successfully prepared using the Na BH4 solid-phase reduction method. It seems that the reduction approach is universal to induce sulfur defects into the matrix of some metal sulfides.To achieve the detailed properties after the modification, XRD, sorption isotherm,Raman, XPS, UV-vis DRS, PL and photoelectrochemistry analysis were carried out to investigate the crystal phase structure, specific surface area, surface chemical states,types and content of sulfur defects, optical absorption property, bandgap structure and separation efficiency of photoinduced carriers on the as-prepared catalysts.And the photocatalytic performance of the samples was systematically determined by the water splitting for hydrogen production under visible light(λ>420nm).The main research contents and results are as follows:(1) The introduction of sulfur defects decreases the conduction band minimum(CBM) of Cd S, contributing to the narrowed bandgap, enhanced optical absorption,improved separation efficiency of surface photoinduced carriers and increased photoreactivity toward H2 production over the Cd S-R2. Treated at 275 oC, the Cd S-R2 achieves its maximum photocatalytic performance. The corresponding H2-evolution rate reachs 4.2 mmol h-1.g-1, which is 3.3 times as high as the pristine Cd S. However,the Cd S-R2 encounters the poor photocatalytic stability, and is deactivated slowly after 4 h reaction. In this regard, the unstable performance of the Cd S-R2 can be significantly improved by the modification fluorine ions. Moreover, the introductionof fluorine ions has a positive effect on the efficient separation of the surface photogenerated carriers on the Cd Sx. Compared with the Cd Sx, the F-modified Cd Sx displays an enhanced H2-production rate of 6.0 mmol?h-1?g-1 with an increasment of42.9 % and maintains the high stability after 20 h photocatalytic reaction.(2) After the heat-treatment with Na BH4, the Zn-S and In-S bonds in the lattice of Zn In2S4 was partially destructed, resulting in the generation of a sulfur-defectrelated state, a decrease in the CBM, improved visible-light absorption, a remarkably increased separation efficiencyof photogenerated charge carriers and a consequently enhanced photocatalytic activity. It shows that the optimal H2-evolution rate of 13.2mmol h-1.g-1 was achieved on the Zn In2S4 treated at 275 o C, 2.9 times as high as that of the pristine one. In addition, the catalyst exhibits the good photocatalytic stability after 15 h reaction.(3) The bandgap structure of Cd In2S4 can also be slightly configured by regulating the content of the sulfur in the bulk by the Na BH4 solid-phase reduction method. Similar improved photoelectric properties were obtained as mentioned above.The result indicates that the optimum heat-treatment temperature for Cd In2S4-xis300℃.The Cd In2S4-x displays an enhanced and stable photocatalytic activity toward water splitting. The H2-production rate over the Cd In2S4-x(1.1mmol·h-1·g-1) is twice as high as that on the pure Cd In2S4, even if the sulfur-deficient sample was evaluated after 18 h photocatalytic reaction.
Keywords/Search Tags:Sulfide, Sulfur defect, Visible light, photocatalysis, Water splitting
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