Interface Engineering And Electrode Modification In Organic-silicon Hybrid Solar Cell

Solar energy, as a clean and green energy source, could effectively solve the problems of exhaustion of fossil resources and greenhouse effect nowadays. Solar cell has attracted wide interests. Organic-silicon hybrid solar cell has shown great potential to reduce the cost. This thesis focuses on interface engineering of the rear and front electrode in organic-silicon hybrid solar cell. The work was included as follows:1. Monolayer graphene grown by CVD method was wet transferred onto silicon substrate, and was applied to organic-silicon hybrid solar cell as cathode interface layer. The morphology of graphene on rear surface of silicon were investigated, it indicated that the as-synthetized graphene was monolayer. The PCE of hybrid solar cell contained graphene was increased by 22%, mainly attributed to the improvement of rear contact as well as the decrease of interface recombination.2. Silver nanowires(AgNWs) always suffer from large surface roughness, junction resistance and poor adhesionon substrates, and general treatments, such as high-temperature thermal annealing, would increased the cost because of high energy consuming and complex process. Here, a solution processed and low cost graphene oxide(GO) at room temperature was used to enhance the conductivity of AgNWs without any additional annealing. The electrical and optical properties of AgNWs/GO composite electrode was compared with commercial ITO glass.3. AgNWs/GO composite electrode was applied to organic-silicon solar cell to replace traditional thermal evaporated silver grids. By adjusting the concentrations of AgNWs suspension and the spin coating speed, the PCE of hybrid solar cell was optimized to 13.3%. It was proved that GO could not only increase the fill facetor(FF) by improving conductivity of transparent electrode and strengthening adhesion between AgNWs and substrates, but also enhance the open-circuit voltage(Voc) by deepening the work function of PEDOT:PSS.