RF-MEMS Switch Design Based On Periodical Dielectric Layer

With the development of communication technology, the traditional switch can’tsatisfy the people increasing requirement. At this time, the MEMS switch comes tothe people’s daily life. Due to the big advantages relative to the traditional switch,people realize that the necessity of further studying the performances of the RF-MEMS switch. The current MEMS switch has single structure. Besides, the switchhas big return wave loss and low transmission efficiency, which restrict thedevelopment of the RF-MEMS switch. This paper adopts periodic structure switch,which has characteristic of high transmission efficiency and satisfy the realityrequirement.This paper firstly discusses the RF-MEMS switch basic theory and maintechnical index. The fabrication process is given. The CST software is used toanalyze the signal transmission efficiency when the switch structure adopts differentdielectric layer and structure. Besides, this paper constructed the math model basedon the performance and structure parameters. Such as the “turn-on time model” and“falling down model” are constructed by Matlab. At the same time, the performanceand structure parameters influences on the models are researched. The studying resultshown that the switch based on periodic structure has better transmission efficiencythan the single dielectric layer switch. When the T=50μm, the periodic switch can geta best transmission efficiency. In addition, when the bias working voltage adoptshigh frequency pulse voltage, the switch can get a good reliability. If the plateddistance adopts2μm, effective contact area adopts3×104μm2, the depth of grooveadopts5μm, the switch structure adopts periodic structure, the switch return waveloss can reach to-28.13dB, the inserting loss can reach to-0.54dB.