Preparation And Characterization Of Heterogeneous Substrate Polycrystalline Silicon Thin Seed Layers

Photovoltaic conversion is one of the most effective methods using solar energy resources. Currently, silicon solar cells in the photovoltaic market dominated, but due to the high cost of silicon, and a significant reduction in the cost of great difficulties in practice, In order to save silicon materials, amorphous silicon thin-film polycrystalline silicon thin film and polycrystalline silicon solar cells were developed as an alternative to the single crystal. Poly crystalline silicon thin film solar cell is low cost, inefficiency recession. It is possible to prepare on an inexpensive substrate material, and more efficient than the amorphous silicon thin film batteries. As the performance of polycrystalline silicon thin films directly affects cell efficiency, in order to obtain high-quality polycrystalline silicon thin film batteries, one important way is to try to improve the conductivity of polycrystalline silicon thin film, and prepare high-quality polycrystalline silicon thin film.In this paper, we reported our arts about making seed layers on normal glass using metal induced crystallization method. Many kinds of measurements like X-ray Diffraction (XRD), Raman Spectra, Scan Electron Microscopy (SEM), and Hall test are invited to characterize the structure and quality. In addition to the flexible graphite sheet substrate seed layer polycrystalline silicon thin films growth conditions were studied. The main results and conclusions contained herein are as follows:1. Aluminum Induced Crystallization (AIC) technology was invited to make pc-Si thin film on normal glass substrate at low temperature in a short period, and the samples with the multilayer structure of glass\aluminum\amorphous silicon were prepared on glass substrate by magnetron sputtering, and then annealed in a tube annealing furnace in nitrogen atmosphere at a certain temperature continued two hours to complete the aluminum-induced crystallization. SEM and optical microscopy tests showed that the aluminum layers have been completely replaced by polycrystalline silicon layers which are continuous and uniform thickness, Raman and XRD results indicated that the polycrystalline silicon seed layers have good crystal quality, and grain size. Hall test showed the polycrystalline silicon seed layers are heavily p-doped, and have good electrical properties.2. The amorphous silicon thin films were prepared on 0.25mm thick graphite paper substrate by magnetron sputtering, then subjected to RTA rapid thermal annealing rapid crystallization into the amorphous silicon polycrystalline silicon thin film seed layer. By XRD analysis, the polycrystalline silicon thin seed layer apparent Si (220) preferred orientation. And at the same annealing temperature, annealing time grows, Si (220) preferred orientation is more evident.