Structural Design And Key Technology Research Of The Amorphous Siliconthin Film Solar Cell

Amorphous silicon( ??HSi :) thin film solar cell is considered to be one of the strong candidates for the future development of the third generation cell,due to desposition at low temprature,flexible substrate.However,the traditional solar cell,such as single junction amorphous silicon and double-junction solar cell,limit the conversion efficency of amorphous silicon cell and affect development of ??HSi : solar cell.In this paper,we present a novel absorber layer of a-si solar cell,which was consisted of four absorber layer with different bandgaps.We annlyzed theoretically the material parameters which influence on conversion efficiency of solar cell.The I-V and quantum efficency of double-junction solar cell and novel solar cell are simulated.In addition,we prepare the double absorber layer by PECVD and the light trapping structure on of surface ??HSi : by laser scanning.all work is listed as follows:A conversion efficency of 11% is achieved for optimized the single-junction solar cell.On this basis,a conversion efficency of 11.281% is achieved for double-junction solar cell.In addition,a solar cell with four absorber layer is simulated by AMPS-1D and achieve conversion efficency of 13.727%.we analysed the different performance of the two solar cells in terms of the recombination rate and transport of electron–holes pairs.The light trapping structure on of surface ??HSi : is prepared to reduce the loss of reflection.Theresultsis analyzed that different atmospheric conditions,different laser energy and different scanning speeds influence on strcuture of surface and optical properties.Finally,the minimum reflectance is achieved under energy of 3mJ/cm2,atmophere of6 SF and scanning speed of 0.4 ?m/s.The double absorber layer is prepared in quartz glass by PECVD and laser annealing.The optical properties and fourier transform infrared spectroscopy is analyzed under different pressure.The best optical properties of opticalthin film is achieved under80 pa.Under various environments by laser annealing,The double absorber layer having better absorption than other conditions in near-infrared region, is prepared under SF6.