Numerical Simulation Based On High Efficient Intermediate-band Solar Cell Of ZnTe:O

Theoretical and experimental research article by the method of ZnTe:O performance with intermediate materials, and found that the material is suitable as a solar cell light absorption layer. On this basis, further study by the ZnTe:O intermediate band solar cell material prepared, including photo-generated carriers, carrier transport and recombination, establishment and optimization of the physical model of the solar cell manufacturing.Then, we use the X-ray photoelectron spectroscopy research its chemical properties and optical properties of ZnTe:O preparation material found that the sample has a superior light absorption capacity, compared with the traditional ZnTe materials, smaller than the band gap of the material of the absorption spectrum range significantly increased, show ZnTe:O material more suitable as a solar absorbing layer.Based on the study prior to the design of ZnTe:O absorption layer physical model of the solar cell, and analysis of the influencing factors and the performance of the solar cell model, we found that:compared with the solar cell material ZnTe, ZnTe:O intermediate with battery does have a higher conversion efficiency, short-circuit current is about twice as much. However, since the physical model due to cell structure and manufacturing process, the overall conversion efficiency is not high, but this does not indicate ZnTe:O material is not suitable as a solar cell material. Therefore, this article ZnTe:O solar cell material to optimize the design and use Burgelman, who developed the solar cell capacitor simulation software (SCAPS) the battery performance of the structure of each test, found that:(1) the ZnTe:O material as the intrinsic layer, the battery performance parameters are far superior to no intrinsic layer and the intrinsic layer is ZnTe; (2) different types of doped ZnTe:O intrinsic layer by varying the Fermi level in the middle band position on solar cell performance parameters, simulation results show that:n-type ZnTe:O as the intrinsic layer short-circuit current density Jsc and battery efficiency of 52.39 mA/cm2 and 61.58% respectively, much higher than the p-type ZnTe O structure soalr cell.