Research Of CuSbS₂ Thin Film Solar Cells

For the advantages of high photoelectric conversion, no light induced degradation, good response for weak light, strong ability to resist radiation, long life, so CIGS thin film solar cells is known as the most promising thin-film solar cell. However, due to the metal of indium and gallium in the earth is reserves are very scarce. Those serious constraints of the development and popularization of CIGS thin film solar cell.CuSbS2 has similar properties with CIGS, the same high absorption coefficient, it forbidden band gap is close to the optimum value 1.5eV, so CuSbS2 thin film material suitable for solar cell absorber layer material. The raw material is rich in the earth, which is beneficial to the mass production of the industry. The melting point of CuSbS2 is 535℃, which is much lower than CIGS and Cu2ZnSnS4 material. Therefore, the substrate temperature during the preparation of the thin film can be reduced, and the flexible solar cell is favorable for the development of the polymer substrate.In this paper, CuSbS2 thin film material was deposited by co-evaporation (PVD) technology. The effects of process parameters (such as substrate temperature, deposition rate) and process route (such as evaporation sequence) on the quality of the film were systematically studied. Respectively, one-step, two-step preparation CuSbS2 film and explore the relationship of The relationship between the composition, phase and crystallinity of CuSbS2 thin films and the preparation process were studied. Research shows that two-step method, the thin film prepared with high purity and good crystallinity. On this basis, a detailed study of the phase structure, optical properties and electrical properties CuSbS2 films and studied the gradient of the sample composition, the film component (copper-rich and antimony-rich) on the phase structure.In this thesis, the device structure glass/Mo/CuSbS2/CdS/ZnO/AZO/Ag prepared CuSbS2 thin film solar cells. We have made a solar cell device with an efficiency of 1.9%, the open circuit voltage reaches 526mV.