GaN HEMT Plasma Wave Nonresonant Response Basic Research

With the continuous development of society, the semiconductor device frequencyin IC that people designed is getting higher and higher, device working on terahertzfrequency and terahertz technology,as a new technology, is being more and morecensored. Among these device, the plasma wave device, thanks to the electron plasmawave s unique working frequency, maybe a kind ofdevice whichcould working onthefrequency and the key component of terahertz wave generator and receiver and gains apromising expectation..This article describes the basic principles of the MOSFET and HEMT device andintroduces the2DEG model of electron in the inversion layer of the device. We describebasic concepts of the plasma wave, illustrate the fluid model of2DEG in the inversionlayer. We solve the HEMT non-resonant response basic equation, get its formula andwrite a MATLAB program to do the calculation. We also raise a improved algorithmand verify it via the MATLAB program, through the result it may be more accurate. Wegive some notes about the possible question in solving the response and writing theprogram.