Exploring Of A-Si TFT Model

ABSTRACT:This work studied a amorphous silicon thin film transistor(a-Si TFT) model based on inverted-stagger structure a-Si TFT. The field effect mobility of a-Si was less than1cm2/V·s, With this restriction, an automated tool used for extraction of initial parameters in the region above threshold voltage was build by matlab. Then, this work extracted model parameters in different regions used a parameter extraction software, a model which has a good consistency with experimental data was achieved. This model can be broadly applied to a series of different TFT devices in the same production process.On the basis of the above exploring, This work analyzed the influence of gate bias voltage to the threshold voltage, a model which meet with the characteristics of threshold voltage shift with the time of gate bias voltage was achieved. With the effects of a-Si TFT in TFT-LCD, this work amended the model to make it simulate the transfer characteristics of a-Si TFT over gate bias voltage accurately, which has a great significance to estimate the performance for a-Si TFT. Moreover, this work analyzed the influence of temperature to threshold voltage of a-Si TFT, a model which meet with the characteristics of threshold voltage shift with temperature was achieved by adjust the parameters.