Design Of Mm-wave Linear Superposition Oscillator Based On180nm CMOS Process

In recent years, the design of millimeter-wave communication system has becomea hot topic, at the same time, millimeter-wave technology is used widely in oureveryday life. However, this technology still has a lot of questions need to be solved.Nowadays, there are mainly two ways to produce mm-wave signal: first, thetechnology based on optics; second, the technology based on electronic. What’s more,the electrical method still has two directions: first, the method depends on compoundsemiconductors; second, the method depends on standard silicon substrate CMOSprocess. Compared with traditional optics mm-wave technology, the methodmentioned in this paper has many advantages, such as high integration level, lessrequire towards the process, low cost, the possibility of on-chip system, and breakthrough the limit of maximum oscillation frequency.This paper presents a millimeter wave oscillator that generates signal at36.56GHz. The mm-wave oscillator is realized in UMC0.18μm CMOS process. Thelinear superposition (LS) technique breaks through the limit of cut-off frequency (fT),and realizes the oscillation much higher than fT. Based on the theory mentioned before,the3and4chapter in this paper shows the detail of circuit simulation, the design oflayout, test of the chip, and analysis of the data.Measurement results show that the LS oscillator produces a calibrated-37.17dBmoutput power when biased at1.8V, the output power of fundamental signal is-10.85dBm after calibration. The measured phase noise at1MHz frequency offset is-112.54dBc/Hz at the frequency of9.14GHz. This circuit can be properly applied tothe mm-wave communication system with advantage of low cost and high integrationdensity. The measurement result satisfies the expecting requirement.