A Study Of 4H-SiC PiN Diode α Detectors

This paper’s main research topic is to study the performance of 4H-SiC PiN diode material α detectors, this topic came from the detector project research group.Semiconductor silicon carbide(SiC) materials have a large band gap, high thermal stability,high thermal conductivity and better anti-radiation capability which is an advanced material compared with silicon(Si), germanium(Ge) and gallium arsenide(GaAs) semiconductor material in nowadays’ semiconductor manufacturing industry. Therefore wide band-gap semiconductor material radiation detectors is widely used than other types of detectors. At present, the usage of wide band-gap semiconductor materials for manufacturing detector are:avalanche photodiode detector, Schottky barrier diode radiation detectors, metal-semiconductor- metal UV detectors. This paper studied the use of 4H-SiC PiN diode material α particle detector performance. This kind of detector can be widely used detection of the strength of α particle radiation and can also be used to monitor residence α particle radiation. Therefore study α radiation detector is very useful for our daily life.4H-SiC material of α radiation detector can operate at high temperature and high pressure, high power and large intensity of ambient radiation, also the detector response to αparticles is significant. This characteristic has been some researchers experiments verified.Prior to the design of a large number of researchers for the Schottky diode detector structure structure, this paper is to study the use of PiN diode detector α production structure, the key step is to determine the thickness of the PiN diode n- type epitaxial layer software SRIM.Then analyzes the research status of 4H-SiC ohmic contact material, the current form of the n-type ohmic contact technology is very mature, n-type ohmic contact has been widely used in the production process. However to form a p-type ohmic contact is still facing many difficulties. This design of the ohmic contact metal electrode structure of Ti / Al / Au alloy,which is mainly to prevent Au sputtered Al is oxidized.Finally use software to simulate when different bias and n- type epitaxial layer is doped with different concentration of 4H-SiC material Pi N diode detector for different incident energy of the impulse response α particles, concluding:(1) at the same concentration of ntype epitaxial layer, the greater the bias, of α particles in response to incident more significant,(2) under the bias of the same, the larger the doping concentration of α particles in response to incident more significant.This paper still has some problems, first of all the references is limited, and some of them are old fashion, research work is done not sufficient, in addition this paper did notpropose many new ideas, just designed a simple detector structure, did some basic research.Based on these concerns, Further research work needs to be done.