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Capacitance Extraction Method Research Of New Type TSV In Three Dimensional Integrated Circuit

Posted on:2015-07-09Degree:MasterType:Thesis
Country:ChinaCandidate:B XiongFull Text:PDF
GTID:2308330464964581Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
For better performance, lower power consumption and smaller size, three-dimensional integrated circuit can be regarded as a effective choice to reduce the feature sizes. The three-dimensional integrated circuit technology using silicon vias(TSV) as interconnection lines between the different layers of the technology as the core of the three-dimensional integrated circuit interconnect technology plays a pivotal role. With the increasing performance requirements of the TSV, some new structure TSV was gradually developed, its electrical and thermal performance is better than the conventional TSV. The impact of the delay and frequency domain characteristics caused by new structure TSV capacitance becomes a very important study in the TSV research.This paper aims to establish regular and new structure TSV general capacitance model, and analyze the impact of process parameters on new structure TSV parasitic capacitance, delay and frequency domain characteristics. Firstly for the cylindrical/conical TSV and coaxial coupled/air gap TSV, two generic capacitive models are proposed accordingly.For the cylindrical / conical TSV capacitive model, the capacitance related factors for which the TSV height, radius and tilt angle and other parameters is analyzed and its impact on the overall capacitance is discussed. Then the impact of coaxial coupling / air gap TSV process parameters on the capacitor is analyzed, which can greatly reduce the air gap TSV total capacitance. In the manufacturing process, the physical parameters can be suitably adjusted according to the actual values, and thereby the best results are obtained.Secondly the TSV delay characteristics are analyzed. TSV delay model deduced by its equivalent circuit model and the model is calculated using the first-order RC delay and by SPICE simulation to verify. Nextly by a discussion of each of the three structures TSV, TSV length, number of changes in the angle of the air gap, delay characteristics of TSV is discussed.Finally the frequency domain characteristics of air gap TSV is studied. TSV modeling of air gap TSV, conventional and coaxial coupling TSV is established using HFSS respectively. impact on the frequency domain characteristics of the different structuresTSV, different number of air gap angle, different inner shaft materials, different dielectric materials is discussed.
Keywords/Search Tags:air gap TSV, capacitance model, delay characteristic, frequency domain characteristics
PDF Full Text Request
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