Research Miniaturization Of High Voltage Power Supply Based On Si C Devices

High voltage power supply is a basic energy conversion unit in the power electronics system. It has been very eye-catching in military, scientific, medical, environmental engineering and other aspects. It provides energy for high-power microwave(HPM), has the characteristics of high peak power and high average power. A greater high voltage and large enough power is needed especially in vacuum devices represented by gyrotron. When dealing with non-traditional security, the demand of mobility and concealment is raised in high-power microwave system, thus increasing the power density of high-voltage power supply is very urgent in the system design.Silicon carbide(SiC) devices break the limits of physics apply of silicon(Si) devices. It can improve the switching frequency, reduce losses and simplify complex cooling system, which can effectively achieve the miniaturization of high-voltage power supply. The full text effectively use of high-frequency switching characteristics, high temperature, high pressure and small conduction loss of Si C insulated gate field effect transistor(MOSFET) and Schottky barrier diode(SBD).In this paper, the basic topology and feed method of high-voltage power made are introduced, the benefits of series and parallel resonant charge(LCC) to reduce switching losses are analyzed and the calculation of resonance parameters is derivated in detail. A simple and precise method of calculating is provided. This article focuses on solving a major contradiction when to improve the switching frequency, the product of resonant inductor and capacitor is small while the output power is large and boost is high. Since the switching frequency is too high, the step-up transformer is difficult, a large high-frequency loss, and insulation treatment is also difficult, leading to the transformer inductance leakage and high voltage distribution parameter product, which restrict the normal operation of the resonant circuit and limit the output of a single module. So the analysis and design of a combination of high-voltage and high frequency power supply for the high-voltage booster module structure is focused on, the resonant inductor-capacitor product is reduced effectively, the power capacity expansion and system engineering integration is achieved.In addition to increase the switching frequency, subsequent problems to be solved including: the package of high voltage high frequency transformer and rectifier, the fast driving of high frequency and high power MOSFET rectifier. Unlike conventional high voltage silicon stack rectifier, you need to consider the impact of high-voltage distribution parameters and insulation. The Si C-SBD series is selected to replace the high-voltage silicon stack rectifier and equalization voltage problems in high voltage diodes in series is considered.During the electrical design and high voltage test, to ensure reasonable and safety of the design, this paper analyzes and summarizes a number of engineering experience including processing and testing of high voltage distribution parameters, high voltage grounding techniques and safety discharge, quick drive and protection circuit design, thermal design and insulated, and electromagnetic compatibility analysis and load testing. Finally, the silicon carbide high-voltage power switch and traditional high-voltage power supply are calculated, simulated and compared.