Study On Light Regulation Of Field-effect Transistor Nonvolatile Memory

Organic field-effect transistor(OFET) memory devices have attracted extensive attention due to their advantages of nondestructive read-out, easily integrated structure and well compatibility with flexible substrate. As the next-generation data storage technology to replace or supplement existing inorganic semiconductor memory technology, the organic field-effect transistor memory has great research value and economic prospects. However, the performance of the memory devices as well as the memory mechanism problem still need urgently to be solved.In this thesis, the development history, devices type and working mechanism of OFET memory are introduced, and a series of OFET memory devices with stable performance are fabricated and their respective working mechanism is analysed in detail.(1)The OFET memory devices based on Si/SiO2/PVK/Pentacene/Au structure are demonstrated, and the devices show good photoelectric response characteristics. The OFET memory devices showed stable ambipolar memory properties, and the retention time of both hole-trapping mode and electrontrapping mode could be well maintained for more than 104 s with a high ON/OFF current ratio of 103 and 104, respectively. In addition, the memory characteristics of the OFET ambipolar memory devices confirmed that light illumination as well as electrical stress can act as an independent programming/erasing operation method.(2) The OFET memory devices based on Si/SiO2/PMMA/Au NPs/PVK/Pentacene/Au structure are demonstrated. The Au nanoparticles worked as a floating gate layer are prepared by thermal evaporation method, which is simple and controllable. The photoelectric memory properties of the OFET memory devices with Au nanoparticles floating gate are studied. The light illumination is used as a method of information programming operation, and the devices show good performance of photoelectric data storage and stability.(3) The OFET memory devices based on Si/SiO2/PMMA/ PVK POSS/Pentacene/Au structure are demonstrated. The mixing layer of polymer film PVK POSS worked as dielectric layer was prepared by using spin coating method. The photoelectric storage characteristics are studied. And we explore the multi-storage properties of the OFET memory devices with mixing layer of polymer film PVK 944.