Research Of The Technology Of Radiation Hardening On LVDS Interface

LVDS( Low-Voltage Differential Signaling) is one of the most important technologies on the CMOS.circuit design.In today society,Nowdays,with the rapid development of information technology,the mount of data transmission more and need more big,the transmission speed requirements are also getting higher and higher. LVDS technology has the advantages of high speed,low power consumption,lost cost,the advantage of anti common mode noise.Provides the possibility to solve the bottleneck.In this paper, based on the SMIC0.13 micron technology, according to TIA/EIA-644-A-2001 international standard and international standard IEEE design of the LVDS interface circuit and layout,including the LVDS driver,LVDS receiver,bandgap reference,and auxiliary module.This paper gives a detailed introduction to the advantages of LVDS technology,each module of the circuit principle is analyzed,and ultimately a full functional LVDS interface circuit and layout,and the realization of radiation hardening function.This paper adopts LVDS driver structure with feedback mechanism to achieve a more stable performance. A bandgap reference source circuit can also provide a reference voltage and reference current so as to simplify the circuit structure, reduce the layout area. A new switching structure to achieve more effective switch state. The simulation results finally gives quantitative. In addition, the paper against the radiation based on reinforcement requirements, in view of the effect on the single particle suppository and total dose effects respectively adopts double protection ring structure and the ring gate structure to achieve a radiation hardening function.