Minority Carrier Lifetime Distribution Simulation Study Of The Impact Of Fast Recovery Diode Characteristic

Fast recovery diode(FRD) main parameters include: reverse recovery time trr, soft factor S and reverse recovery peak current Irr. In order to reduce the trr, it has been used gold doping,platinum doping, or electron irradiation reduce the excess carrier lifetime in the lightly doped region and provide a decrease of turn-off time. Unfortunately, these techniques yield a large increase of on-state voltage drop and the softness factor is not improved, and the power consumption of the diode is increased.Using Silvaco simulation software, this paper studies the local lifetime control technology as the key point, and analyzes the trr, S, Irr, and VF respectively, at the same time,simulate and optimize the structural parameters of the low lifetime region.The simulation optimization clearly show that the optimal position for the low lifetime region is near the PN junction. Localized lifetime control technology can not only increase the softness factor S, but also can keep lower voltage drop VF. The optimum thickness of the low lifetime region depends on the lifetime of the low lifetime region. The best width of local lifetime region and lifetime, softness of local lifetime region and theory of fast recovery diode design and manufacturing has a significant impact on theoretical and practical. At the same time improved the traditional fast recovery diode’s parameter characteristic and keep lower voltage drop.