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Study On Wide Band MMIC Low Noise Amplifier

Posted on:2017-04-11Degree:MasterType:Thesis
Country:ChinaCandidate:Z H YangFull Text:PDF
GTID:2308330485497364Subject:Measuring and Testing Technology and Instruments
Abstract/Summary:PDF Full Text Request
The receiver in the military and aerospace fields is expected to improve the size, and the requirement for high speed wireless communications is to increase data rates by improving spectrum efficiency. This developments require high-performance transceiver hardware capable of multi-band and high linearity operation. Low noise amplifier (LNA) is key component in reception blocks of almost all communication systems. Also it is the first real element of signal processing in any reception system, hence it decides the bandwidth and linearity of the entire system. Based on GaAs MMIC technology, LNA, with additional advantages such as high linearity and wide bandwidth, is first candidates for modern communications system. In this work, an ultra-wide band LNA using GaAs technology is reported.Firstly the development history, inherent advantages and potential applications of GaAs MMICs are presented, and the survey of broadband MMIC LNA at home and abroad is completed. Then, the thesis focuses on the key process of GaAs technology, modeling of pHEMT and passive devices. The basic theory and mainly qualification of MMIC LNA is also recommend. In order to choose suitable foundry, circuit stage and pHEMT size, the characteristics of pHEMT in the OMMIC ED02AH are presented compared with the Win PL.15. The design flow of MMIC LNA has been analyzed, including circuit design, Monte Carlo analysis, layout optimization. In the end, a 6-18GHz MMIC LNA has been designed and implemented in OMMIC ED02AH technology, providing NF< 2.2dB, Gain of 22.7±1 dB, VSWR<2 and P1dB>11dBm.
Keywords/Search Tags:GaAs MMIC, broadband low noise amplifier, pHEMT transistor analysis, Monte Carlo analysis
PDF Full Text Request
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