Design Of A High Voltage Diode With Super Barrier Structure

In this thesis, a new high voltage diode with a super barrier structure is defined and demonstrated, which makes the super barrier structure successfully applied in high voltage diode. Then, the life control experiments are conducted to optimize the dynamic characteristic of this new device. The contents of this paper are concentrated on the research steps of the new defined high voltage diode.Based on the application of power rectifier, the development of power rectifier is introduced, as well as the requirement that the power rectifier needs in those new applications. The operating principle of super barrier rectifier is analyzed, and the formula is derived for forward voltage drop. From the perspective of principle and formula, the problems when super barrier structure is applied in the field of high voltage device are analyzed, and the methods to solve those problems are proposed. A new high voltage diode with super barrier structure is defined, which is a combination of P-buried layer and super barrier structure. And the voltage of the new defined diode with super barrier structure can be improved obviously.The research of the new defined high voltage diode with super barrier structure is conducted as follows: 1.Verify the feasibility of the new defined diode and get the initial values of all parameters with the help of MEDICI. 2. Constitute the process steps of the new defined diode with the help of TSUPREM4 and MEDICI, according to above results and the foundry process conditions. After several rounds of simulation and optimization, the parameters of the new defined diode with super barrier structure are as follows: the reverse break voltage is 733 V, the forward voltage drop is 1.10 V, and the reverse recovery time is 101 ns. Compared with the low voltage diode with super barrier structure, the high voltage diode with super barrier diode is achieved with a P-buried layer. 3. Based on above simulation results, the layout, the tapeout and the test analysis work of the new defined diode is conducted one after another. The test results are as follows: the reverse break voltage is 671 V, the forward voltage drop is 0.92 V, and the reverse recovery time is 305 ns.The life control experiments are conducted to the tapeout results with several different experiment conditions. After life control experiments, the test results are as follows: the reverse break voltage is 675 V, the forward voltage drop is 1.97 V, and the reverse recovery time is 64 ns. The comparison with an advanced product shows that the electrical properties of the new proposed diode are equivalent to the advanced products abroad.