| The rapid development of science and technology give rise to newly research areas and innovation inventions nowadays. Because of its lightweight, integrated, energy-saving, efficient effects, the organic thin-film transistor technology which attracting more attention is able to become the future mainstream. Organic thin-film transistor technology aims to high performance device as crucial purpose all the time. Meanwhile the possibility and derivative of organic materials are always the key to the unlimited future. Thence the research direction of this article to explore that what kind of process will be a better user for new high-performance organic material preparation device.In this paper, the research expand from the fabrication of organic thin-film transistor device which is based on the doping active layer and the modifications of insulating layer. First of all, we using new organic small molecule active material which include thiophene different indigo structure doping with classic commercial polymer material P3 HT to fabricate organic thin-film transistor having a high carrier mobility and current switching ratio, while the threshold voltage is maintained at a low level. Analysis on the performance of the test and Atomic Force Microscope, we make a statement that the doping method improve the surface morphology of the active layer so that it has better flatness and reduction of interface traps. This approach combines the material properties and the complementary advantages of feasibility. Secondly, By exploring the impact of device performance from annealing time and annealing temperature, we obtain conclusions that rapid annealing of active layer material is conducive to the performance. Finally, we make research of modification of surface morphology and analyzes the influence and draw conclusion that insulating layer do cauces the influence to the active layer film above. |
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