Modelling And Analysis Of Switching Characteristics Of A 3300V/1200A Welded IGBT Device

As a new type of power electronic devices, IGBT has been widely used because of its advantages of low driving power, fast switching speed as MOSFET and low saturation voltage as GTR. In recent years, the research of IGBT has become a hot topic, since the advent of IGBT in the 80’s, the establishment of the simulation model has been widely concerned by people. The domestic and foreign scholars have carried out the research on the simulation model. In this paper, a 3300V/1200A IGBT module, which is independently developed by the State Grid Smart Grid Research Institute, is studied of the model and switching characteristics. In this paper, a large number of IGBT modeling methods are investigated, and the methods of modeling are summarized and classified. The behavior model is more flexible and easy to modify for electrical engineers, the establishment of the behavior model is on the basis of test and easy to implement.This paper firstly introduces the physical structure, working principle of IGBT and analyzes the static characteristic and dynamic characteristic. The static model and dynamic model are established in the Saber with the transfer characteristic curve, the output characteristic curve and the capacitance characteristic curve tested by the Agilent B1505A and LEMSYS, then are verified in the standard simulation circuit.Then by the theoretical analysis of the IGBT swithing process, and the model of which is based on the previous section, driving parameters such as gate drive resistance, gate drive capacitance, gate drive signal and main circuit parameters such as the influence of stray inductance and the freewheeling diode’s influence on the switching characteristics are simulated in the double pulse simulation circuit.At last, we build the double pulse experiments platform, compared with the most important effects of different values of the gate resistance and gate capacitance of switching characteristics in the actual application, verified the simulation contents of the previous chapter.