The Research Of Electronic Characteristics And Device Simulation In TG FinFETs

In recent years, electronic technology innovation constantly promotes the rapid development of very large scale integration(VLSI) industry. However as the characteristic size continues scaling down of the devices, the electrical performances of conventional planar MOSFET devices are close to the physical limits. It causes technical difficulties, and leads to the secondary effects of non-ideal small-size devices, such as the uncontrollable short-channel effects(SCEs).Particularly, this will induce drain-induced barrier lowering(DIBL), sub-threshold swing( SS) degeneration, and threshold voltage roll-off(th?V), which eventually deteriorate device performances.Facing the above problems, in order to improve the device performances and conform to the International Technology Roadmap for Semiconductors and suppress SCEs, Triple-Gate Fin Field Effect Transistors(TG FinFET) as the nano-sized electronic devices,which are the innovation in CMOS structure and become effective devices to restrain SCEs. This thesis researches on an undoped or lightly doped short channel TG FinFET, considering SCEs. It theoretically analyzes the influence device basic electrical characteristics with the changes of geometry parameters, including the source-drain current(dsI), threshold voltage(thV),th?V, SS and DIBL. The geometry parameters include the gate oxide thickness, the channel length, the fin width and the fin height.Based on the theoretical analysis, the process and device simulations using the TCAD(Technology Computer Aided Design) software are carried out. Firstly, the TCAD software can be used to make the process simulation of TG FinFET device.Then, taking SCEs into account, the simulation results are demonstrated. The transfer and output characteristics in one-dimensional can be shown to analyze device basic electrical characteristics. The simulation curves of dsI, thV, th?V, SS and DIBL with the changes of geometry structure parameters can be regarded as the references for the device structural design. Moreover, the two-dimensional and three-dimensional schematic of device structure can be employed to observe the effects of physical parameters, and then analyze the distribution of electric field and mobility. To further prove the validity and accuracy of the numerical simulation based on TCAD tool, some conclusions can be received by comparing the numerical simulation results with model solutions and experimental results. Furthermore, error analysis are completed. It shows good consistency and better fitting.In conclusions, the numerical simulation results of TG FinFETs offer better guidance for beginners of this kind of devices, and provide deep theoretical analysis and manufacturing process simulations for integrated circuit designers. Moreover, the TCAD simulation of the device basic electrical characteristics has a high accuracy in an intuitive way.