Deposition Of SiOx Layer By Atmospheric Pressure Cold Plasma Jet(APPJ) Under Different Combination Frequency

Atmospheric pressure cold plasma jet?APPJ? deposition of thin film technology has attracted more and more attention in recent years, because of low discharge device cost, no need for expensive vacuum equipment, simple operation,benefit for the use of continuous production processing and miniaturization of portable, therefore it has wide application prospect and become one of the hot research topic in the low temperature plasma on international. According to the survey, dual frequency?DF?atmospheric pressure cold plasma jet has many advantages more than single frequency drive atmospheric pressure plasma jet, because it combines the characteristics of the low frequency?LF? and the radio frequency?RF? making it shows the stronger activity of plasma and the plasma reactive relative spectral intensity. And compared with the individual radio frequency?RF? drive, double frequency?DF? driven plasma jet has a longer plasma plume, which makes them more convenient to deal with some complex three-dimensional?3D? geometry materials.Silica oxide films, due to unique micro structure?including the nanoscale holes and particles? and superior performance plays an important role in the semiconductor device process. There are many traditional methods to prepare silica oxide films such as sol-gel, the thermal oxidation, magnetron sputtering and chemical vapor deposition?CVD?, the shortage of these methods is pollution of the environment, not conducive to environmental protection, high deposition temperature, easily damaged parts and complicated equipment process and so on. Compared with the above methods, plasma enhanced chemical vapor deposition?PECVD? technique uses the glow discharge,making the rarefied gas ionized under high frequency electric field generated plasma,these ions are accelerated in the electric field and gain energy so that they can be achieved oxidation silicon thin film deposition under the low temperature, the characteristic of this method is low deposition temperature, simple equipment and process, the fast growth rate, accurately control of the deposition rate, compact structure of thin film, suitable for large-scale preparation. In recent years, more and more people pay attention on this methods.Kim and Alonso deposited the silica oxide films using 25 kHz and 13.56 MHz single frequency drive plasma respectively, but O₂ has been bubbled into the bothexperiments as oxidizing substances, and this paper adopts double frequency drive atmospheric pressure cold plasma jet, using SiCl4/Ar plasma with the oxygen in the air as sedimentary silicon oxide film of oxide material success, which makes the experimental cost significantly lower, more superior in the large-scale industrial production. In addition, this paper use a combination of different frequency?50kHz +33MHz/69MHz/69MHz? to deposite silicon oxide film, and it is charactized by the spectrometer, scanning electron microscopy?SEM?, Fourier infrared spectrum?FTIR?and X-ray diffraction?XRD? test, through these methods, different combination frequency plasma emission spectrum and the influence of the film morphology and structure can be explored.