Study Of Silicon-based Doped Quantum Well And Quantum Cascade LED

Silicon-based light emitting diode(LED) is based on column ? element silicon. And it is a high performance light emitting device that establishes on the traditional technology of PN junction after several technical developments. Due to the transparent characteristic on wavelength segment of communication window and broad industrial base of silicon, it has practical significance that builds silicon-based optical interconnection and optoelectronic integration on chips. Moreover, silicon-based light source is very important to the realization of optical interconnection in future information society. This study proposes a new type silicon-based PIN type LED which uses doping quantum dots pumping, emitting from localized states and quantum cascade structures through the experiment and theoretical research on silicon-based LED.In the specific experimental research, the pulsed laser deposition technology is used to fabricate the samples of doping quantum dots and quantum cascade structures. After the fabrication, the annealing technique is used to improve the light emitting effect of the samples. And the quantum dots and film structures are investigated by the SEM and TEM. Moreover, the doping silicon-based quantum dots and film structures are irradiated by electronic beam and annealed to be researched of the growth pattern. At last, we take electroluminescence and photoluminescence method to analyze the light emitting results of the various silicon-based quantum cascade structure LEDs.In the simulation calculation research, abinitio non-relativistic quantum mechanical analysis is taken to research the calculation of the energy bands. The simulation calculation are worked by using the local density approximation(LDA) and non-local gradient-corrected exchange-correlation functional(GGA) methods. Also, the energy states analysis and curved surface effect are used to manipulate the light emitting wavelength and research the luminescence mechanism.At last, we design and fabricate the new type silicon-based doping quantum dots quantum cascade structure LED, and use photoluminescence and electroluminescence spectrum to study the luminescence performance. The results show that the devices have a great threshold effect and sharp emission peak on the optic communication window.