Preparation And Property Of Antimony Telluride Low-dimensional Structures

Using the simple hydrothermal method,in alkaline environment with SbCl3 powder and Na2TeO3 powder as Sb source as the Te source,NaBH4 as a reducing agent,no other adhesive in the conditions,the growth rate to control the proportion of each component and alkaline concentration to control system.The obtained samples were SEM,XRD,HRTEM,SAED and DSC test,test results show that the prepared three hexagonal antimony telluride nano structure,the structure of the melting point of 420 DEG C,compared to the bulk of antimony telluride is much lower(650 C).Because of the low melting point and nano structure,the structure has a great help to improve the thermoelectric properties and micro phase change memory devices.A series of single crystalline antimony telluride thin films were prepared by high vacuum thermal evaporation method.The effects of different substrates on the growth of the samples were studied by means of comparison and observation.It was found that the lamellar structure was more suitable for the growth of the films.The samples were tested by SEM,XRD,HRTEM,SAED and AFM,and the six sides of the samples were observed to grow in a columnar manner,thus forming a continuous film.This study provides a new method for the growth of antimony telluride thin films.