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Study On The Electronic And Optical Properties Of Phosphene In Semiconductor Materials

Posted on:2019-05-03Degree:MasterType:Thesis
Country:ChinaCandidate:J LiFull Text:PDF
GTID:2310330545958280Subject:Physics
Abstract/Summary:PDF Full Text Request
The two-dimensional semiconductor material,phosphene,as a powerful sub-stitute for graphene,has an anisotropic,natural direct band gap and a prominent current switching ratio.We can regulate the excess of phosphorus from the semi conducting to the metal state.Phosphene has a unique folded honeycomb struc-ture,which makes the stress in the vertical plane applied.Compared with the plane stress,the band gap of phosphorus and the one dimensional edge band are more sensitive to the stress in the vertical plane.It is very good to adjust the op-tical absorption by the uniform stress and the local inhomogeneous stress in the vertical plane.Through the plane electric field,the band gap of the phosphene can be well regulated,and the transition from the semi conducting state to the metal state can be achieved.Under the action of a plane electric field and an electric field in a vertical plane,the transition between the edge bands of the nanobelts at the Zigzag boundary can be achieved.The system considered on-site Kulun interaction,when the Fermi level is OeV,the nano Zigzag boundary with spin up and down the edge of split;when the Fermi level is positive,the edge of the spin up belt into the edge spin down;when the Fermi level is negative when the edge spin take down into a spin up edge.
Keywords/Search Tags:tight binding model, phosphorene, edge band, strain, absorption, electric field, Hubbard model
PDF Full Text Request
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