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Vapor-phase Synthesis And Photoelectric Performance Investigation Of Low Dimensional In2O3 And InxTey Nanostructures

Posted on:2016-07-29Degree:MasterType:Thesis
Country:ChinaCandidate:J Q LiFull Text:PDF
GTID:2311330479454520Subject:Materials engineering
Abstract/Summary:PDF Full Text Request
The research of semiconductor nanomaterials, especially metal oxide semiconductor namomaterials have got huge development in recent years. In the future, with the development of electronic information technology, the research of semiconductor namomaterials will show us greater value and potential. As one of them, In2O3 has been widely researched.We synthesized In2O3 nanomaterials by CVD method on different temperature?time et al. The main ingredient is cubic phase by XRD spectrums. And we found lots of nanowires and octahedrons from SEM pictures, and characterized the growth direction and angle by TEM pictures. Then, we built the In2O3 nanowires into FET semiconductor devices by printing and coating process. Utilized the photoelectric test platform, we tested the IV curves under different voltages to analyze its electric properties, tested the response curves under different wavelengths of light and the relaxation curves under the specific wavelength light, to analysis its optical properties. Referenced the synthesis and characterization methods of In2O3 nanomaterials, we synthesized the InxTey nanometerials by CVD method. Firstly, we try to use unit telluride indium compounds as precursor, grew the InxTey nanometerials in different conditions. The SEM pictures show us a lot of nanobricks and a small amount of nanowires, the XRD characterization show that they are accorded with the standard spectrum of InTe. Subsequently, we attemptted to use Te powder and In powder mixture as multivariate precursor to participate in the gas phase reaction, regulating the experimental parameters, such as temperature and pressure, we got different morphology. At lower temperatures, mainly got nanorods and nanobricks, at higher temperatures, mainly got nanofilms and nanowires. We found they are In2Te3 by the XRD characterizations.In general, the In2O3 nanomaterials have a good photoelectric performance. And the photoelectric performance of InxTey is still in researching, hope to get semiconductor optoelectronic devices show fast response in ultraviolet-visible-infrared.
Keywords/Search Tags:Semiconductor, Nanomaterials, In2O3, In2Te3, Photoelectric property
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