Preparation And Characterization Of Hexagonal Boron Nitride Surface Nanostructures

Since graphene was isolated successfully in 2004, many other 2-dimensional(2D) materials have come to the research community all over the world. Hexagonal boron nitride(h-BN) is one among them. Hexagonal boron nitride has an atomic structure similar to graphene, and the most insulating in conductivity among all these 2D materials. Many researchers have tried to fabricate the graphene-BN hetero-structure for the electronics application. In this work, we focus on the hexagonal boron nitride. We carried out researches in fabrication of nanostructure on h-BN surfaces in two aspects. One is to etch nanostructure on h-BN surfaces, and the other is to fabricate the h-BN blisters in micrometer scale.When etching part, we explored the etching process, and optimized the detailed techniques and experimental parameters. Firstly, we successfully obtained the anisotropic trenches in line-shape., and then make it controllable in length, depth, width and density in both reducing atmosphere and also the depths in oxidized atmosphere. On the other hand, we found how the anisotropy varies when the pressure and concentration of etching atmosphere are tuned. In this way, we fully comprehend the factors and technique how to etch the h-BN surfaces for the ideal nanostructures.In the blisters part, we were looking for the way to fabricate the blister structure on h-BN surface. The experiment was carried out in a CVD chamber. We take the plasma to enhance the decomposition of hydrogen. And then we can find the key parameters for the bubble fabrication. Finally, the bubbles on h-BN surfaces were characterized by optical microscopy, atomic force microscopy and Raman spectrometer in the assistance of the sample stage which can vary the temperature in our control to find the relation between temperature and the variations of blister structure.