| ZnO is one of the most promising semiconductor materials with wide bang gap and high excition binding energy at room temperature. It has been discovered that the incorporation of elements into ZnO as dopants has become an important route to increase its optical, electrical performance. In this paper, Ga-doped ZnO films were synthesized via sol-gel and further were used as seed layers to synthesize Ga-doped ZnO nanostructures via PEG400-assisted bath chemical route. The morphology, structure, optical properties and photocurrent were investigated. The main research contents and results are given as follows:(1) Ga-doped ZnO films were synthesized via sol-gel, and the morphology, structure, optical properties were investigated. The effect of annealing temperature on the microstructure and optical properties of the Ga-doped ZnO thin films were studied. The results showed that the properties of the samples were dependent on the anealing temperature.(2) GZO nanosheets/nanopillars morphologies on GZO thin films were synthesized successfully via PEG400-assisted chemical bath method at low temperatures. The structure and optical property differed with the synthesis temperature increasing from 50 oC to 80 oC. The nanosheets were likely to generate at lower temperature while nanopillars were likely to generate at higher temperature. The GZO structures with fine nanosheet morphology(synthesized at 60 oC) had unique optical property with fewer defects and better luminous efficiency. Furthermore, both GZO nanosheets and GZO nanopillars possessed high photoresponse, which indicated that the multifunction of GZO nanostructures was essentially important to advanced nanosemiconductors.(3) The influence of PEG400 on the structure of the Ga-doped ZnO nanostructures synthesized via low-temperature bathe chemical route was studied. The results indicate that PEG400 plays a key role in the formation of the Ga-doped ZnO nanosheets. But PEG400 has no distinct influence on the nanopillar structure. |
PDF Full Text Request