The Preparation And Application Of The Dye Sensitization Solar Cell Light Anode By PVD

In recent years,The quality of conductive films is increasing with technological advancements.Indium Tin oxide(Tin-doped indium oxide,ITO)film have some advantages such as high transmittance of visible light(90%),strong reflection coefficient of infrared light and low resistivity,Strong adhesion,good wear resistance and chemical stability.So it was widely studied and applied to all kinds of flat panel display,organic light emitting diode(OLED),touch screen panel,car windshields,solar cells,EMI shielding,and many other fields.In order to meet the requirements of the dye sensitization solar cell light anode,the ITO transparent conductive film combines a high electrical conductivity with high heat properties should be prepared is the focus of this thesis.In this paper,transparent conductive indium tin oxide(ITO)films were prepared onto fluorine-doped tin oxide(FTO)films substrate by pulsed magnetron sputtering.The crystal phase structure of ITO films was investigated by X-ray diffraction(XRD)and surface morphology was observed by scanning electron microscope(SEM),we study the influence of sputtering time,substrate temperature by digital four-probe tester and UV-Vis spectrophotometer on the electric conductive and optical transmittance properties of films.The results show that compared to the fluorine-doped tin oxide(FTO)films,the ITO/FTO composite films has better conductivity,but the light transmittance decreased.Under the conditions of the pressure is 1.0 Pa,the sputtering power is 45 W,the substrate temperature is 400 ?,the sputtering time is 45 min,the results show that the visible light transmittance is 70%,sheet resistance reaches 1.0 ? / ?(? represents a certain film thickness per unit area).The obtained ITO/FTO composite films were subsequently annealed in air and nitrogen at temperatures ranging from 200 to 500 ?.The influences of the annealing temperature and atmosphere on the microstructure,optical transmittance and electrical properties of the ITO/FTO composite films were investigated,and the heat resistance of ITO/FTO composite films are found by the samples annealed at 500 ? for different annealing times(1,2,3,4,and5),and the results indicate that with the increase of annealing temperature,the crystallinity is grows.So as to improve the light transmittance and the conductivity of the film.Compared to the air atmosphere,the films were annealed in nitrogen has better conductivity under same process parameters.But the visible light transmittance of film what had been annealed at 300?C was inferior to the air atmosphere.The figure of merit values of the films in air were better than in nitrogen.And,the heat resistance of the film,whether annealed in air or nitrogen,remain stable.Therefore,the requirements of photoelectric and heat resistance properties of ITO/FTO composite films as the dye sensitization solar cell light anode are satisfied,and the expected goals of the subject are achieved.