Model And Simulation Of AlN Growth Kinetic By MOCVD

With a wide band gap, the high breakdown voltage, the big thermal conductivity and the small refractive index, there are tremendous applications of AlN in high-power devices, high-voltage devices and UV photoelectricity devices. The presence of qualified AlN t hin film is possible by MOCVD, but there are plenty of unknown restrains which are related to the details in the progress of the kinetic growth so the precise kinetic model including almost everything important in the growth must be studied immediately.The study based on the Grove theory and the KMC has been done to obtain the kinetic information about the growth of AlN in MOCVD. The results acquired from the model have the excellent agreements with the data acquired from the experiments and do guide the real fabrication of the AlN thin film.With the Grove theory, the chemical mechanism of precursors which are TMAl and ammonia and the transportation in gaseous phase are established to gain the gas phase transportation constant hg, the surface reaction constant ks and the number of molecular in per film. The numerical relations which contain the growth velocity of AlN versus temperature and pressure shows that the data acquired by the model has a tiny difference which holds the 8.63% mean error in temperature and the 8.03% mean error in pressure from the data done in experiments.With the KMC simulation, the growth kinetic mechanism is be set up in which there are plenty of factors such as the deposition rate, the mobility rate and the desorption rate has been determined according to the interreactions in the moleculars. In Matlab, the molecular-level progress in which contains the nucleation, the inland bonding and the growth of AlN thin filmis has been programmed to display the 2-D surface topography with the varying growth velocity and the different timing.