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Research On Preparation And Photocatalytic Activity Of Semiconductor Nanocomposite Based On G-C3N4

Posted on:2017-01-06Degree:MasterType:Thesis
Country:ChinaCandidate:J H LiFull Text:PDF
GTID:2311330488976134Subject:Materials engineering
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Recently, graphic carbon nitride ?g-C3N4?, a metal-free semiconductor material has been widely used as a low-cost, stable and visible-light-active photocatalyst in the sustainable utilization of solar energy owing to its excellent chemical inertness and unique electronic band structure. However, pure g-CsN4 is still far from satisfaction due to its small specific surface area, high recombination rate of photogenerated electron-holes and low quantum yield, which limits its extensive application in the energy and environmental relative fields. To deal with these problems, it may be a feasible approach to construct heterogeneous structure by coupling two different semiconductor materials with matched band structure and band positions to promote the effective separation of the photoinduced electron-hole pairs, and thus enhance the photocatalytic activity. In this thesis, we focus on the preparation and photocatalytic activity of semiconductor nanocomposites based on g-CsN4. The main contents and conclusions are described as follows:?1? The TiO2/g-C3N4 semiconductor nanocomposite had been prepared by an acetic acid assisted sol-gel method combined with thermal polymerization process. The component, microstructure and morphology of various samples were characterized by means of several analysis methods, such as TG, XRD, SEM, TEM, FT-IR, XPS and UV-vis DRS. The results showed the aggregation degree of TiO2 nanoparticles could be effectively alleviated due to the introduction of g-C3N4, and the optical absorption edge of TiO2/g-C3N4 composites had an obvious red shift to the longer wavelength in comparison with pure TiO2. The performance test showed that TiO2/g-C3N4 composite had more excellent photocatalytic activity in comparison with pure TiO2 or pure g-C3N4. Especially under visible light irradiation, the degradation rate of optimal TiO2/g-C3N4-74.4 nanocomposite on methyl orange ?MO? was 2.80 times as great as that on pure g-C3N4. The enhanced photocatalytic activity mainly benefited from the effective separation of photoinduced electron-hole pairs and the extended optical absorption range, both owing to the heterojunction built-in between TiO2 and g-C3N4.?2? The In2S3/g-C3N4 semiconductor nanocomposite had been fabricated by coupling hydrothermal method with thermal polymerization process. The results showed that the morphology of the obtained In2S3 was converted from mainly aggregated nanoparticles into two dimensional interlaced nanosheets due to the introduction of g-C3N4, and the optical absorption edge of In2S3/g-C3N4 composites had an obvious red shift to the longer wavelength in comparison with pure g-C3N4. Under visible light irradiation, all obtained In2S3/g-C3N4 composite samples had more excellent photodegradation activity than pure g-C3N4 or pure In2S3, and the degradation rate of optimal 0.6In2S3/0.4g-C3N4 nanocomposite on MO was 5.20 times as great as that of pure In2S3 or 16.25 times as great as that of pure g-C3N4. The enhanced photocatalytic activity was closely related to the heterojunction structure. Besides, the significant change of morphology which caused an obvious increase in surface area and absorption ability also played a vital role in improving the photocatalytic activity.?3? The SnO2/g-C3N4 semiconductor nanocomposite had also been synthesized by combining hydrothermal method and thermal polymerization process. The results showed that the aggregation degree of SnO2 nanoparticles could be effectively alleviated due to the introduction of g-C3N4, and the UV-vis DRS further displayed that the optical absorption edge of SnO2/g-C3N4 composite had an obvious red shift to the longer wavelength in comparison with pure SnO2. Under the same condition of the ultraviolet visible light or visible light irradiation, compared with pure SnO2 or pure g-C3N4, the photocatalytic degradation properties of SnO2/g-C3N4 nano-composite on Rhodamine B?RhB? could be remarkably improved. Especially under the condition of visible light irradiation, the degradation rate of the optimal 0.5SnO2/0.5g-C3N4 nanocomposite could reach 13.32×10-3 min-1, which was 2.90 times as great as that of pure g-C3N4 (4.56×10-3 min-1). The enhanced photocatalytic activity could be mostly ascribed to the heteroj unction structure, which promoted the effective separation of photogenerated electron-hole pairs.
Keywords/Search Tags:Graphic Carbon Nitride, Compound Modification, Heterojunction Structure, Photocatalytic Activity
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