Study And Design Of Sapphire Growth Process By Kyropoulos Method

As one of many methods used for sapphire crystal growth, the Kyropoulos method is widely adopted because of its advantages. Compared with other methods to produce sapphire crystal, the Kyropoulos method ensures the growth of high quality and large diameter single crystal sapphire. But in the actual production, there are still many defects in sapphire crystal by the Kyropoulos method, Such as the occurrence of bubbles, grain boundaries, and even crystal crackings. Crystal passing rate by the traditional Kyropoulos method is not ideal because the original preparation process is not perfect which needs a lot of improvements. The treatment of raw materials, the design of thermal field and seeding technology are the key to the quality of sapphire crystal. This research has improved the original crystal growth process by the Kyropoulos method and prepared the sapphire crystal with a higher quality, better performance. The properties of the sapphire were characterized by X-ray diffraction,infrared spectroscopy and laser Raman microscope. At the same time, the paper systematically studied the formation mechanism of various types of crystal defects,and proposed the corresponding solutions.