The Hall Effect Of Half-metallic Co₂MnSi And Fe₃O₄ Films

Half-metallic materials have received great attentions due to their potential spintronics applications in which are determined by the properties including the magnetic,transport properties and Hall effect.In this work,the ternary alloy Co₂MnSi and Fe₃O₄ films were chosen to investigate the Hall effect in half-metal.The Co₂MnSi films were fabricated by DC magnetic sputtering.The structures of Co₂MnSi films grown on 600? are well organized.The saturation magnetization of well-organized polycrystalline Co₂MnSi films reaches the theoretical value?5 ?B/f.u.?.The resistivity of Co₂MnSi polycrystalline films decreases with the increasing grown temperatures,and appears a shallow minimum in poorly-crystallized films at low temperatures.The scaling law of the anomalous Hall effect is 2.4AHEr rxx for polycrystalline films.No appropriate scaling relations are found in the amorphous films.The epitaxial Fe₃O₄ films were grown on MgO?SrTiO₃?substrates by reactive sputtering.The planar Hall resistivity ?_xy of Fe₃O₄ films increases with increasing magnetic field.The ?_xy-? curves in which ? is the angle between the magnetic field and normal to the current,show one fold sine curves in low magnetic fields and two fold in higher fields.The changes in ?_xy-? curves can be explained by antiphase boundaries?APBs?antiferromagnetic chains under the magnetocrystalline anisotropy field.