Fluoro-containing Organosilicon Material With High Performance: Preperation And Properties

With the development and advancement of new materials and new technologies,the semiconductor industry occupies an important position in the industry and becomes an industry power that can not be ignored in the ultra-large scale integrated circuit?ULSI Ultra Large Scale Integrated Circuit?.Ultra-large scale integrated circuit devices continue to increase the integrated density,component size to the deep micron level gradually reduced,the continuous reduction in line width and transistor density continues to increase,resulting in wire capacitance between the capacitor and interlayer capacitance,and wire resistance increases?R?-the resulting RC signal delay is increased,which not only greatly limits the performance of the device,but also increases the loss of the device and reduces the service life of the device.The widespread use of dielectric materials?SiO₂?on the market has been unable to meet the needs of VLSI development,which has led to a gradual increase in the market demand for low dielectric constant materials,so more and more researchers are looking to develop New,low-cost,high-performance low dielectric constant materials instead of traditional materials as dielectric layers for use in very large scale integrated circuits.This paper summarizes the research and development of low dielectric constant materials in recent years,and designs and synthesizes several novel fluorine-containing silicone low dielectric constant materials.The fluorine atom has a high electronegativity,and the electrons in the periphery of the atom are relatively poor due to the strong bond of the nucleus,and the ability to polarize the atoms is relatively poor,and the fluorine atom also increases the free volume of the polymer.The introduction of fluorine atoms into the polymer material will make the polymer macromolecules more difficult to be polarized by the applied electric field,which will cause the dielectric constant of the material to be reduced to different degrees.On the other hand,the bond of the C-F bond is higher than the C-H bond and has a smaller polarizability.The fluorine-containing polymeric material thus has higher thermal stability and mechanical strength relative to the fluorine-free polymeric material.This paper designed and synthesized two kinds of fluorine-containing silicone low dielectric constant polymer materials.One is the synthesis,characterization and characterization of trifluorovinyl ether monomers and polymers.We started from the monomer with different functional phenolic hydroxyl groups,the synthesis of three different functional allyl monomer,and then through the hydrosilylation reaction,the trifluoroether ether functional groups into the monomer,and then trifluorovinyl ether monomers with different functionalities were synthesized and the trifluorovinyl ether functional group was converted into a network structure polymer containing perfluorocyclobutane ether by thermal polymerization,and the polymer research on material performance.The second is the tetrafluorovinyl ether containing organosiloxane monomer and polymer synthesis,characterization and performance studies.We synthesized the organosiloxane monomer containing tetrafluorovinyl ether from the vinylmethyldimethoxysilane monomer by Grignard reaction,hydrolysis reaction and hydrosilylation reaction.The trifluorovinyl ether functional group was converted into a network structure polymer containing perfluorocyclobutane ether by thermal polymerization,and the polymer research on material performance.This organosiloxane can be easily converted to a cross-linked network at high temperature?>160 ??,which showed water uptake of below 0.12 wt%?kept at boiling water for 72 h?and good dielectric properties with an average dielectric constant?Dk?of below 2.56 and an average dissipation factor?Df?of less than 1.8 × 10-3 at the range of frequencies varying from 1.0 to 30 MHz.The cross-linked network also showed high transparency: a sheet with a thickness of 1.1 mm exhibited transmittance of over 90% from 400 to 1100 nm.Furthermore,the cross-linked network exhibited high thermostability with a 5 wt % loss temperature of 444 ??in N₂?.These results imply that this new organosiloxane is suitable as the adhesive or sealant for the application in microelectric industry.