Preparation Of MoS₂/InN Nanomaterials And The Study Of H₂ Sensing Performance Based On MoS₂/InN Heterojunction

Dimensional transition metal sulfide nanomaterials and III-V semiconductor nanomaterials have become the research hotspots of the world today,mainly because of their unique physical properties and excellent electrical properties.In this paper,the preparation and characterization of InN and MoS₂ nanomaterials,the photocatalytic degradation of methyl orange solution by MoS₂ nanomaterials and the H₂ detection performance of MoS₂/InN heterojunction nanomaterials devices were studied respectively,the results can be listed as follows:?1?The crystal structures,basic properties and common preparation methods of InN nanomaterials and MoS₂ nanomaterials are introduced.The applications of nanomaterials in micro/nano semiconductor devices and gas detection research based on heterojunction devices are summarized.?2?Three different morphologies of InN nanomaterials were fabricated on Si substrates covered with 60 nm colloidal gold by chemical vapor deposition?CVD?: nanowires,nanowires and nano-triangular pyramids.The luminescent properties and growth mechanism of the three materials were studied in detail,indicating the potential optical application of InN triangular pyramids.?3?The MoS₂ nanomaterials were grown by chemical vapor deposition method.The results showed that there were triangular,tetrahedral and hexagonal nanostructures.The layer of three nanostructures have been studied by Raman spectrum,and the MoS₂ nanomaterials have their own photocatalytic properties,which provide a basis for the photocatalytic degradation of methyl orange.?4?MoS₂/InN heterojunctions were fabricated on SiO₂/Si substrates by two-step CVD method,including InN nanowires and tetragonal MoS₂ nanosheets.Based on the preparation and testing of MoS₂/InN heterojunction nanomaterials,the sensitivity of the device to H₂ detection is 1.12×10⁴%.